IS67WV51216EBLL Overview
The ISSI IS66WV51216EALL and IS66/67WV51216EBLL are high-speed,8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI’s high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.
IS67WV51216EBLL Key Features
- High-Speed access time
- 70ns ( IS66WV51216EALL )
- 60ns (IS66/67WV51216EBLL )
- CMOS Lower Power Operation
- Single Power Supply
- VDD =1.7V~1.95V( IS66WV51216EALL )
- VDD =2.5V~3.6V (IS66/67WV51216EBLL )
- Three State Outputs
- Data Control for Upper and Lower bytes
- Lead-free Available
