IS67WVH8M8BLL Datasheet | ISSI

Overview The IS66/67WVH8M8ALL/BLL are integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 8M words by 8 bits. The device supports a Hyper Bus interface, Very Low Signal Count (Address, mand and data through 8 DQ pins), Hidden Refresh Operation, and Automotive Temperature Operation, designed specially for Mobile and Automotive applications. Distinctive Characteristics Hyper Bus TM Low Signal Count Interface - 3.0V I/O, 11 bus signals - Single ended clock (CK) - 1.8V I/O, 12 bus signals - Differential clock (CK, CK#) - Chip Select (CS#) - 8-bit data bus (DQ[7:0]) - Read-Write Data Strobe (RWDS) - Bidirectional Data Strobe / Mask - Output at the start of all transactions to indicate refresh latency - Output during read transactions as Read Data Strobe - Input during write transactions as Write Data Mask - RWDS DCARS Timing - During read transactions RWDS is offset by a second clock, phase shifted from CK - The Phase Shifted Clock is used to move the RWDS transition edge within the read data eye Performance Summary High Performance - Up to 333MB/s - Double-Data Rate (DDR) - two data transfers per clock - 166-MHz clock rate (333 MB/s) at 1.8V VCC - 100-MHz clock rate (200 MB/s) at 3.0V VCC - Sequential burst transactions - Configurable Burst Characteristics - Wrapped burst lengths: - 16 bytes (8 clocks) - 32 bytes (16 clocks) - 64 bytes (32 clocks) - 128 bytes (64 clocks) - Linear burst - Hybrid option - one wrapped burst followed by linear burst - Wrapped or linear burst type selected in each transaction - Configurable output drive strength - Package - 24-ball FBGA Read Transaction...