IS67WVQ16M4FALL Datasheet PDF - ISSI 1.8V/3.0V SERIAL PSRAM MEMORY Specs

IS67WVQ16M4FALL - 1.8V/3.0V SERIAL PSRAM MEMORY

This page provides the datasheet information for the IS67WVQ16M4FALL, a member of the IS66WVQ16M4FALL 1.8V/3.0V SERIAL PSRAM MEMORY family.

Datasheet Summary

Description

The IS66/67WVQ16M4FALL/BLL are integrated memory device containing 64Mb Pseudo Static Random Access Memory, using a self-refresh DRAM array organized as 16M words by 4 bits.

The device supports Quad DDR interface, which is compatible with JEDEC standard x4 xSPI Flash.

Features

Industry Standard Serial Interface - Quad DDR (x4 xSPI) Interface: Command (1 byte) =SDR Address (2-byte) & Data = DDR - Low Signal Counts :7 Signal pins (CS#, SCLK, DQSM, SIO0~SIO3).
High Performance - Double Data Rate (DDR) Operation: 200MHz (200MB/s) - Source Synchronous Output signal during Read Operation (DQSM) - Data Mask during Write Operation (DQSM) - Configurable Latency for Read/Write Operation - Supports Variable Latency mode and Fixed Latency mode - Configurable Dr.

Datasheet Details

Part number	IS67WVQ16M4FALL
Manufacturer	ISSI
File Size	658.60 KB
Description	1.8V/3.0V SERIAL PSRAM MEMORY
Datasheet	IS67WVQ16M4FALL Datasheet
Additional preview pages of the IS67WVQ16M4FALL datasheet.

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