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IV1Q12050T4 - 1200V SiC MOSFET

Features

  • High blocking voltage with low on-resistance.
  • High speed switching with low capacitance.
  • High operating junction temperature capability.
  • Very fast and robust intrinsic body diode.
  • Kelvin gate input easing driver circuit design Package:.

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Datasheet preview – IV1Q12050T4

Datasheet Details

Part number IV1Q12050T4
Manufacturer IVCT
File Size 1.64 MB
Description 1200V SiC MOSFET
Datasheet download datasheet IV1Q12050T4 Datasheet
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Sep.
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