IV3Q12013T4Z Description
2024 IV3Q12013T4Z- Gen3 1200V 13.5mΩ Automotive SiC MOSFET.
IV3Q12013T4Z Key Features
- 3rd Generation SiC MOSFET Technology with +15~+18V gate drive
- High blocking voltage with low on-resistance
- High speed switching with low capacitance
- High operating junction temperature capability
- Very fast, robust and soft-recovery intrinsic
- Kelvin gate input easing driver circuit design
- AEC-Q101 qualified