150N10
150N10 is IXFN150N10 manufactured by IXYS.
Features
International standard packages JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification mini BLOC with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier q q q q q q q q
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 100 2 4 ±200 TJ = 25°C TJ = 125°C 400 2 12 V V n A m A m A m W
VDSS VGH(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 1 m A VDS = VGS, ID = 8 m A VGS = ±20 VDC, VDS = 0 VDS = 0.8
- VDSS VGS = 0 V
Applications DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls Low voltage relays q q q q q q q
VGS = 10 V, ID = 75 A Pulse test, t £ 300 ms, duty cycle d £ 2 %
Advantages Easy to mount Space savings High power density q q q
IXYS reserves the right to change limits, test conditions, and dimensions.
92803G(8/96)
© 2000 IXYS All rights reserved
1-4
IXFK 100N10 IXFN 150N10
.. Symbol Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 80 9000 S p F p F p F ns ns ns ns n C n C n C 0.25 0.15 0.24 0.05 K/W K/W K/W K/W
TO-264 AA Outline gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd Rth JC Rth CK Rth JC Rth CK
VDS = 10 V; ID = 50 A, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
3200 1800 30
VGS = 10 V, VDS = 0.5
- VDSS, ID = 75 A RG = 1 W (External),
60 100 60 360
Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T
Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83
Inches Min. Max. .190 .202...
