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15N120A - IXSH15N120A

Key Features

  • 2 Mounting torque . 1.15/10 Nm/lb-in. 6 300 g °C generation HDMOS TM process Low VCE(sat) - for minimum on-state conduction losses.
  • MOS Gate turn-on - drive simplicity.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Data Sheet IXSH15N120A IGBT "S" Series - Improved SCSOA Capability IC25 = 30 A VCES = 1200 V VCE(sat) = 4.0 V Symbol V CES www.DataSheet4U.com V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) tsc PC TJ T JM T STG Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 82 Ω Clamped inductive load, L = 100 µH TJ = 125ºC, VCE = 720 V; VGE = 15V, RG = 82Ω TC = 25°C Maximum Ratings 1200 1200 ±20 ±30 30 15 60 ICM = 30 @ 0.8 VCES 5 150 -55 ... +150 150 -55 ... +150 V V V V A A A A TO-247AD G C E µs W °C °C °C Features •2 Mounting torque . 1.15/10 Nm/lb-in.