25N120 Description
+150 V V V V A A A A W °C °C °C TO-247 AD G C E C = Collector, TAB = Collector G = Gate, E = Emitter, Mounting torque (M3) 1.13/10 Nm/lb.in. 6 300 g °C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10.
25N120 Key Features
- for low on-state conduction losses MOS Gate turn-on
- drive simplicity
- VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V
25N120 Applications
- VCES, higher TJ or increased RG Inductive load, TJ = 125° C IC = IC90, VGE = 15 V, L = 100 µH VCE = 0.8 V CES, RG = Roff = 33 Ω Remarks: Switching times may inc