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HiPerRFTM
IXFN 55N50F
Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr
Symbol
Test Conditions
D
G SS
Maximum Ratings
V DSS
V DGR
VGS VGSM I
D25
IDM IAR EAR E
AS
dv/dt
PD TJ TJM Tstg
T J
= 25°C to 150°C
T J
=
25°C
to
150°C;
R GS
=
1
MΩ
Continuous
Transient
T C
=
25°C
TC = 25°C, pulse width limited by TJM TC = 25°C
TC = 25°C
T C
=
25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
500 V 500 V ±20 V ±30 V
55 A 220 A
55 A 60 mJ 3.0 J 10 V/ns
600
-55 ... +150 150
-55 ... +150
W
°C °C °C
TJ VISOL
Md
1.6 mm (0.63 in) from case for 10 s
50/60 Hz, RMS t = 1 min
IISOL ≤ 1 mA
t=1s
Mounting torque Terminal connection torque
- °C
2500 3000
V~ V~
1.
55N50F Datasheet
