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60N60 - IGBT

Key Features

  • q International standard package SOT-227B q Aluminium nitride isolation - high power dissipation q Isolation voltage 3000 V~ q Very high current, fast switching IGBT q Low V for minimum on-state CE(sat) conduction losses q MOS Gate turn-on drive simplicity q Low collector-to-case capacitance (< 50 pF) q Low package inductance (< 5 nH) - easy to drive and to protect Symbol BV CES VGE(th) ICES IGES VCE(sat) Test Conditions I C = 250 mA, V GE = 0 V IC = 250 mA, VCE = VGE VCE = 0.8.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ultra-Low VCE(sat) IGBT IXGN 60N60 VCES = 600 V IC25 = 100 A VCE(sat) = 1.7 V Preliminary data sheet Symbol Test Conditions VCES V CGR VGES VGEM I C25 IC90 I CM SSOA (RBSOA) TJ = 25°C to 150°C T J = 25°C to 150°C; R GE = 1 MW Continuous Transient T C = 25°C TC = 90°C T C = 25°C, 1 ms VGE= 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 30 mH PC TC = 25°C TJ T JM Tstg M Mounting torque d Terminal connection torque (M4) Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s E Maximum Ratings 600 V 600 V ±20 V ±30 V 100 A 60 A 200 A ICM = 100 A @ 0.8 V CES 250 W -55 ... +150 °C 150 °C -55 ... +150 °C 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in.