64N50P
64N50P is IXFN64N50P manufactured by IXYS.
Polar HVTM Hi Per FET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Preliminary Data Sheet
IXFN 64N50P
VDSS ID25
RDS(on) trr
= 500 V = 64 A ≤ 85 mΩ ≤ 250 ns
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md VISOL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C
Maximum Ratings 500 500 ± 30 ± 40 64 150 64 70 2.0 20 700 -55 ... +150 150 -55 ... +150 V V V V A A A m J J V/ns W °C °C °C Features
International standard packages Fast recovery diode z Unclamped Inductive Switching (UIS) rated z Low package inductance
- easy to drive and to protect Advantages z z z mini BLOC, SOT-227 B (IXFN) E153432
S D G = Gate S = Source D = Drain
Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal.
Mounting torque 50/60 Hz t = 1 min IISOL ≤ 1 m A t=1s Mounting torque Terminal connection torque (M4) SOT-227B
1.13/10 Nm/lb.in. 2500 V~ 3000 V~ 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Characteristic Values Min. Typ. Max. 500 2.5 5.0 ±100 TJ = 125°C 25 250 85 V V n A µA µA mΩ
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 8 m A VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V z z
Easy to mount Space savings High power density
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2005 IXYS All rights reserved
DS99349(02/05)
IXFN64N50P
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 40 60 7000 VGS = 0 V, VDS = 25 V, f = 1 MHz 800 100 30 VGS = 10 V, VDS = 0.5 ID25 RG = 2 Ω (External) 25 85 22 200 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 45 120 S p F p F p F ns ns ns ns n C n C n C 0.18 K/W SOT-227B 0.05 K/W SOT-227B Outline gfs Ciss Coss...
