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80N60A - IGBT

Key Features

  • International standard package JEDEC TO-264 AA.
  • Two mached dice connected in parallel.
  • Low VCE(sat) - for minimum on-state conduction losses.
  • MOS Gate turn-on - drive simplicity.

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Other Datasheets by IXYS (now Littelfuse)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary data HiPerFASTTM IGBT www.datasheet4u.com IXGK80N60A VCES IC25 VCE(sat) tfi = 600 V = 80 A = 2.7 V = 275 ns Symbol VCES VCGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150 °C TJ = 25° C to 150°C; R GE = 1 M Ω Continuous Transient TC = 25°C, limited by leads TC = 90°C TC = 25° C, 1 ms VGE = 15 V, TVJ = 125 °C, RG = 10 Ω Clamped inductive load, L = 30 µH TC = 25°C Maximum Ratings TO-264 AA 600 600 ±20 ±30 80 80 200 ICM = 100 @ 0.8 VCES 500 -55 ... +150 150 -55 ... +150 V V V V A A A A W °C °C °C Nm/lb.in.