8N60B
Key Features
- International standard packages
- Low VCE(sat) - for minimum on-state conduction losses
- High current handling capability
- MOS Gate turn-on - drive simplicity
- Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM Applications
- VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V
- Easy to mount with 1 screw (isolated mounting screw hole)
- Low losses, high efficiency
- High power density
