CS29 Datasheet | IXYS

Features Features l I2t TVJ = 45°C VR = 0 V TVJ = TVJM VR = 0 V l l l (di/dt)cr .. TVJ = TVJM repetitive, IT = 40 A f = 50 Hz, t P =200 µs VD = 2/3 VDRM IG = 0.2 A non repetitive, IT = IT(AV)M di G/dt = 0.2 A/µs TVJ = TVJM; VDR = 2/3 VDRM RGK = ∞; method 1 (linear voltage rise) TVJ = TVJM IT = IT(AV)M t P = 30 µs t P = 300 µs 500 1000 5 2.5 0.5 10 -40...+150 150 -40...+150 A/µs V/µs W W W V °C °C °C V~ °C N / lb g Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low cathode-to-tab capacitance (15p F typical) Planar passivated chips Epoxy meets UL 94V-0 High performance glass passivated chip Long-term stability of leakage current and blocking voltage (dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL TL FC Weight Applications l l l l l Motor control Power converter AC power controller Light and temperature control SCR for inrush current limiting in power supplies or AC drive Advantages l l 50/60 Hz RMS; IISOL ≤ 1 m A 1.6mm from case; 10s Mounting force 2500 260 11...65 / 2 11 2 Space and weight savings Simple mounting See CS 29..io1 data sheet for electrical characteristic curves. IXYS reserves the right to change limits, conditions and dimensions. 98839 (5/01) © 2001 IXYS All rights reserved CS 29 Symbol IR, ID VT VT0 r T VGT IGT VGD IGD IL IH tgd Test Conditions TVJ = TVJM; VR = VRRM; VD = VDRM IT = 45 A; TVJ = 25°C For power-loss calculations only (TVJ = 125°C) VD = 6 V; VD = 6 V; TVJ = TVJM; TVJ = 25°C TVJ = -40°C TVJ = 25°C TVJ = -40°C VD = 2/3 VDRM Characteristic Values ≤ ≤ 2 1.5 0.82 16.5 ≤ ≤ ≤ ≤ ≤ ≤ ≤ ≤ ≤ 1.0 1.2 65 80 0.2 5 150 50 2 m A V V mΩ V V m A m A V m A m A m A µs TVJ = 25°C; t P = 10 µs IG = 0.2; di G/dt = 0.2 A/µs TVJ = 25°C; VD = 6 V; RGK = ∞ TVJ = 25°C; VD = 1/2 VDRM IG = 0.2 A; di G/dt =0.2 A/µs Rth JC Rth CK a DC current DC current Max. acceleration, 50 Hz typical 1.2 0.6 50 K/W K/W m/s2 ISOPLUS220 OUTLINE .. Note: All terminals are solder plated. 1 -...