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DGSK36-03CS - Gallium Arsenide Schottky Rectifier

Key Features

  • GaAs Schottky Diode with Enhanced Barrier Height:.
  • lowest operating forward voltage drop due to additional injection of minority carriers.
  • high switching speed - low junction capacity of GaAs diode independent from temperature - short and low reverse recovery current peak due to short lifetime of minority carriers - soft turn off Surface Mount Packages:.
  • Incorporating Single and Dual Diode Topologies.
  • Industry Standard Package Outlines.
  • Epoxy meets UL.

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Gallium Arsenide Schottky Rectifier Second generation DGS 17-03CS DGSK 36-03CS VRRM = 300 V IDC = 29 A CJunction = 10.7 pF Type DGS 17-03CS Marking on product 17A300AS Circuit A C Single DGSK 36-03CS DGSK 36-03CS Common cathode A C A Package TO-252 AA A A TAB TO-263 AB A A TAB A = Anode, TAB = Cathode Diode Symbol VRRM/RSM IFAV IFAV IFSM Ptot Conditions TC = 25°C; DC TC = 90°C; DC TVJ = 45°C; tp = 10 ms (50 Hz), sine TC = 25°C Maximum Ratings 300 V 29 A 17.5 A 80 A 34 W Symbol Conditions Characteristic Values min. typ. max. VF IF = 7.5 A; TVJ = 25°C IF = 7.5 A; TVJ = 125°C IR VR = VRRM; TVJ = 25°C VR = VRRM; TVJ = 125°C 1.5 1.9 V 1.1 V 0.25 mA 0.