DSEC30-02A Datasheet PDF (HiPerFRED Epitaxial Diode) | Download IXYS Corporation DSEC30-02A

DSEC30-02A - HiPerFRED Epitaxial Diode

Features

International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 TC = 25°C mounting torque typical 95 0.81.2 6.
Symbol IR ① Test Conditions TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM IF = 15 A; TVJ = 150°C TVJ = 25°C Characteristic Values typ. max. 100 0.5 0.85 1.05 1.6 0.25 µA mA V V K/W K/W ns 4.4 A.
VF ② RthJC RthCH trr I.

Datasheet Details

Part number	DSEC30-02A
Manufacturer	IXYS Corporation
File Size	53.56 KB
Description	HiPerFRED Epitaxial Diode
Datasheet	DSEC30-02A Datasheet
Additional preview pages of the DSEC30-02A datasheet.

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Full PDF Text Transcription

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DSEC 30-02A www.DataSheet4U.com HiPerFREDTM Epitaxial Diode with common cathode and soft recovery IFAV = 2x 15 A VRRM = 200 V trr = 25 ns A VRSM V 200 VRRM V 200 Type A C TO-247 AD DSEC 30-02A A C A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Test Conditions TC = 150°C; rectangular, d = 0.5 TC = 115°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 2.5 A; L = 180 µH VA = 1.5·VR typ.; f = 10 kHz; repetitive Maximum Ratings 50 15 30 140 0.8 0.3 -55...+175 175 -55...

Published: Apr 16, 2010 |