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DSEC30-02A - HiPerFRED Epitaxial Diode

Key Features

  • International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 TC = 25°C mounting torque typical 95 0.81.2 6.
  • Symbol IR ① Test Conditions TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM IF = 15 A; TVJ = 150°C TVJ = 25°C Characteristic Values typ. max. 100 0.5 0.85 1.05 1.6 0.25 µA mA V V K/W K/W ns 4.4 A.
  • VF ② RthJC RthCH trr I.

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DSEC29-02A HiPerFRED Epitaxial Diode with common cathode and soft recovery

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DSEC 30-02A www.DataSheet4U.com HiPerFREDTM Epitaxial Diode with common cathode and soft recovery IFAV = 2x 15 A VRRM = 200 V trr = 25 ns A VRSM V 200 VRRM V 200 Type A C TO-247 AD DSEC 30-02A A C A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Test Conditions TC = 150°C; rectangular, d = 0.5 TC = 115°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 2.5 A; L = 180 µH VA = 1.5·VR typ.; f = 10 kHz; repetitive Maximum Ratings 50 15 30 140 0.8 0.3 -55...+175 175 -55...