Datasheet4U Logo Datasheet4U.com

DSEC30-03A - HiPerFRED Epitaxial Diode

Key Features

  • q q q q q q q International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 TC = 25°C mounting torque typical 95 0.81.2 6 q q q Symbol IR x Conditions TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM IF = 15 A; TVJ = 150°C TVJ = 25°C Characteristic Values typ. max. 100 0.5 1.20 1.67 1.6 0.25 mA mA V V K/W K/W ns 2.7 A q VF y RthJC RthCH trr IRM q q q Antiparallel diode for high frequ.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
DSEC30-06A High Performance Fast Recovery Diode IXYS
DSEC30-06B High Performance Fast Recovery Diode IXYS
DSEC120-12AK Epitaxial Diode IXYS
DSEC16-06A High Performance Fast Recovery Diode IXYS
DSEC16-06AC High Performance Fast Recovery Diode IXYS

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
DSEC30-02A HiPerFRED Epitaxial Diode
DSEC30-04A HiPerFRED Epitaxial Diode
DSEC30-12A HiPerFRED Epitaxial Diode
DSEC16-06BC (DSEA16-06BC / DSEC16-06BC) HiPerDynFRED Epitaxial Diode ISOPLUS220
DSEC29-02A HiPerFRED Epitaxial Diode with common cathode and soft recovery

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DSEC 30-03A www.DataSheet4U.com HiPerFREDTM Epitaxial Diode with common cathode and soft recovery IFAV = 2x 15 A VRRM = 300 V trr = 30 ns TO-247 AD VRSM V 300 VRRM V 300 Type DSEC 30-03A A C A A C A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Conditions TC = 140°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 2.5 A; L = 180 µH VA = 1.5·VR typ.; f = 10 kHz; repetitive Maximum Ratings 50 15 110 0.8 0.3 -55...+175 175 -55...