DSEC30-04A
Key Features
- International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 TC = 25°C mounting torque typical 95 0.8...1.2 6 * *
- Symbol IR ① Conditions TVJ = 25°C; TVJ = 150°C; IF = 15 A; VR = VRRM VR = VRRM TVJ = 150°C TVJ = 25°C Characteristic Values typ. max. 100 0.5 1.06 1.47 1.6 0.25 µA mA V V K/W K/W ns 6.3 A *
- VF ② RthJC RthCH t rr IRM *
- Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders IF = 1 A; -di/dt = 100 A/µs; VR = 30 V; TVJ = 25°C VR = 100 V; IF = 25 A; -diF/dt = 100 A/µs TVJ = 100°C 30 5.0 Advantages * *
- Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 % ② Pulse Width = 300 µs, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified Dimensions see pages IXYS Data Book © 2001 IXYS All rights reserved 1-1 127 IXYS reserves the right to change limits, test conditions and dimensions.
