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DSEC30-12A - HiPerFRED Epitaxial Diode

Features

  • / Advantages:.
  • Planar passivated chips.
  • Very low leakage current.
  • Very short recovery time.
  • Improved thermal behaviour.
  • Very low Irm-values.
  • Very soft recovery behaviour.
  • Avalanche voltage rated for reliable operation.
  • Soft reverse recovery for low EMI/RFI.
  • Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch.

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Datasheet preview – DSEC30-12A

Datasheet Details

Part number DSEC30-12A
Manufacturer IXYS Corporation
File Size 327.40 KB
Description HiPerFRED Epitaxial Diode
Datasheet download datasheet DSEC30-12A Datasheet
Additional preview pages of the DSEC30-12A datasheet.

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Full PDF Text Transcription

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HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DSEC30-12A 1 2 3 DSEC30-12A VRRM I FAV t rr = 1200 V = 2x 15 A = 40 ns Backside: cathode Features / Advantages: ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Applications: ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) Package
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