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DSEC60-12A - HiPerFRED Epitaxial Diode

Key Features

  • q q q q q q q International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 TC = 25°C mounting torque typical 165 0.81.2 6 q q q Symbol IR x Conditions TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM IF = 30 A; TVJ = 150°C TVJ = 25°C www. DataSheet4U. com Characteristic Values typ. max. 250 1 1.78 2.74 0.9 0.25 mA mA V V K/W K/W ns A q VF y RthJC RthCH trr IRM q q q Antiparallel diod.

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DSEC 60-12A HiPerFREDTM Epitaxial Diode with common cathode and soft recovery IFAV = 2x 30 A VRRM = 1200 V trr = 40 ns TO-247 AD VRSM V 1200 VRRM V 1200 Type DSEC 60-12A A C A A C A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Conditions TC = 115°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 11.5 A; L = 180 µH VA = 1.25·VR typ.; f = 10 kHz; repetitive Maximum Ratings 70 30 200 14 1.2 -55...+175 175 -55...