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ADVANCE TECHNICAL INFORMATION
DSEE30-12A
HiPerFREDTM Epitaxial Diode
IFAV = 30 A VRRM = 1200 Vc trr = 30 ns
VRRMc V 1200
VRRM V 600
Type
TO-247 AD
DSEE30-12A
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Symbol IFRMS IFAVM c IFSM EAS IAR TVJ TVJM Tstg TL Ptot Md Weight
Conditions TC = 90°C; rectangular, d = 0.5 TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 1.3 A; L = 180 µH VA = 1.5· VR typ.; f = 10 kHz; repetitive
Maximum Ratings 60 30 200 0.2 0.1 -55...+175 175 -55...+150 A A A mJ
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Features Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0
A °C °C °C °C W Nm/ lb.in. g
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1.6 mm (0.063 in) from case for 10 s TC = 25°C Mounting Torque typical
260 165 0.
DSEE30-12A Datasheet
