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DSEI120-12A - Fast Recovery Epitaxial Diode

Features

  • / Advantages:.
  • Planar passivated chips.
  • Low leakage current.
  • Very short recovery time.
  • Improved thermal behaviour.
  • Extremely low switching losses.
  • Low IRM-values.
  • Soft recovery behaviour.
  • High reliability circuit operation.
  • Low voltage peaks for reduced protection circuits.
  • Low noise switching.
  • Low losses.
  • Operating at lower temperature or space saving by reduced cooling.

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Datasheet preview – DSEI120-12A

Datasheet Details

Part number DSEI120-12A
Manufacturer IXYS Corporation
File Size 205.64 KB
Description Fast Recovery Epitaxial Diode
Datasheet download datasheet DSEI120-12A Datasheet
Additional preview pages of the DSEI120-12A datasheet.

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Full PDF Text Transcription

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Fast Recovery Epitaxial Diode (FRED) DSEI 120-12A IFAV = 109 A VRRM = 1200 V trr = 40 ns Part number DSEI 120-12A TO-247AD 3 1/4 4 (TAB) Features / Advantages: • Planar passivated chips • Low leakage current • Very short recovery time • Improved thermal behaviour • Extremely low switching losses • Low IRM-values • Soft recovery behaviour • High reliability circuit operation • Low voltage peaks for reduced protection circuits • Low noise switching • Low losses • Operating at lower temperature or space saving by reduced cooling Applications: • Antiparallel diode for high frequency switching devices • Antisaturation diode • Snubber diode • Free wheeling diode in converters and motor control circuits • Rectifiers in switch mode power supplies (SMPS) • Inductive heating and melting • Un
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