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DSEI2x30-06P - Fast Recovery Epitaxial Diode

Download the DSEI2x30-06P datasheet PDF. This datasheet also covers the DSEI2X30 variant, as both devices belong to the same fast recovery epitaxial diode family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 2 independent FRED in 1 package.
  • Isolation voltage 3000 V~.
  • Planar passivated chips.
  • Leads suitable for PC board soldering.
  • Very short recovery time.
  • Soft recovery behaviour.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (DSEI2X30_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
DSEI2x30-06C Fast Recovery Epitaxial Diode IXYS
DSEI2x30-04C Fast Recovery Epitaxial Diode IXYS
DSEI2x30-10B Fast Recovery Epitaxial Diode IXYS
DSEI2x31-04C Fast Recovery Epitaxial Diode IXYS
DSEI2x31-06C Fast Recovery Epitaxial Diode IXYS

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
DSEI2x30-12B Fast Recovery Epitaxial Diode
DSEI2X30 Fast Recovery Epitaxial Diode
DSEI2X31 Fast Recovery Epitaxial Diode (FRED)
DSEI2x31-06P Fast Recovery Epitaxial Diode
DSEI2X101 Fast Recovery Epitaxial Diode (FRED)

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Fast Recovery Epitaxial Diode (FRED) DSEI 2x30 DSEI 2x31 IFAVM = 2x30 A VRRM = 600 V trr = 35 ns VRSM V 600 600 VRRM V 600 600 Type DSEI 2x 30-06P DSEI 2x 31-06P 2x 30 2x31 Symbol IFRMS IFAVM IFRM ① IFSM TVJ TVJM Tstg Ptot VISOL Md Weight Conditions Maximum Ratings (per diode) TVJ = TVJM TC = 85°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM 70 30 375 TVJ = 45°C; t = 10 ms (50 Hz), sine 300 -40...+150 150 -40...+150 A A A A °C °C °C TC = 25°C 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Mounting torque (M4) 100 2500 3000 1.5 - 2.0 14 - 18 W V~ V~ Nm lb.in. 18 g Symbol Conditions Characteristic Values (per diode) typ. max. IR VF VT0 rT RthJC RthCK trr IRM dS dA a TVJ = 25°C VR = VRRM TVJ = 25°C VR = 0.