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DSEI2x61-10B - Fast Recovery Epitaxial Diode

Features

  • / Advantages:.
  • Planar passivated chips.
  • Low leakage current.
  • Very short recovery time.
  • Improved thermal behaviour.
  • Very low Irm-values.
  • Very soft recovery behaviour.
  • Avalanche voltage rated for reliable operation.
  • Soft reverse recovery for low EMI/RFI.
  • Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch.

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Datasheet preview – DSEI2x61-10B

Datasheet Details

Part number DSEI2x61-10B
Manufacturer IXYS Corporation
File Size 515.43 KB
Description Fast Recovery Epitaxial Diode
Datasheet download datasheet DSEI2x61-10B Datasheet
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Full PDF Text Transcription

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FRED Fast Recovery Epitaxial Diode Low Loss and Soft Recovery Parallel legs Part number DSEI2x61-10B 2 1 3 4 DSEI2x61-10B VRRM I FAV t rr = 1000 V = 2x 60 A = 45 ns Backside: isolated Features / Advantages: ● Planar passivated chips ● Low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Applications: ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) Package: SOT-227B
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