DSEP29-03A Datasheet | IXYS

Features A q m J A °C °C °C W Nm g q q q q q q International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 TC = 25°C mounting torque typical 165 0 0.6 2 Applications q q q Symbol IR x Conditions TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM IF = 30 A; TVJ = 150°C TVJ = 25°C Characteristic Values typ. max. 250 1 0.93 1.26 0.9 0.5 m A m A V V K/W K/W ns q q q q q VF y Rth JC Rth CH trr IRM Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders IF = 1 A; -di/dt = 200 A/ms; VR = 30 V; TVJ = 25°C VR = 100 V; IF = 50 A; -di F/dt = 100 A/ms TVJ = 100°C Advantages q 30 7 A q q Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the mutating switch Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 % y Pulse Width = 300 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified Dimensions see outlines.pdf © 2000 IXYS All rights reserved 1-2 IXYS reserves the right to change limits, test conditions and dimensions. DSEP 29-03A 60 A IF 40 TVJ=150°C TVJ=100°C TVJ= 25°C 20 200 5 10 400 Qr 800 TVJ = 100°C n C 600 IF = 60A IF = 30A IF = 15A 15 VR = 150V IRM 20 IF = 60A IF = 30A IF = 15A 30 A 25 TVJ = 100°C VR = 150V .. 0 0.0 0.5 1.0 VF V 1.5 0 100 A/ms 1000 -di F/dt 0 0 200 400 ms 1000 600 A/ 800 -di F/dt Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -di F/dt 90 ns TVJ = 100°C VR = 150V Fig. 3 Peak reverse current IRM versus -di F/dt 14 V VFR 12 tfr 0.8 VFR 0.6 10 0.4 0.2 8 0 200 400 0.0 ms 1000 600 A/ 800 di F/dt TVJ = 100°C IF = 30A 1.2 µs 1.0...