DSEP9-06CR
Key Features
- Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
- Low cathode to tab capacitance (< 25 pF)
- International standard package
- Planar passivated chips
- Very short recovery time
- Extremely low switching losses
- Low IRM-values
- Soft recovery behaviour
- Epoxy meets UL 94V-0
- Isolated and UL registered E153432 Applications
