DSEP9-06CR Datasheet PDF (Epitaxial Diode) | Download IXYS Corporation DSEP9-06CR

DSEP9-06CR - Epitaxial Diode

Features

Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation.
Low cathode to tab capacitance (< 25 pF).
International standard package.
Planar passivated chips.
Very short recovery time.
Extremely low switching losses.
Low IRM-values.
Soft recovery behaviour.
Epoxy meets UL 94V-0.
Isolated and UL registered E153432.

Datasheet Details

Part number	DSEP9-06CR
Manufacturer	IXYS Corporation
File Size	44.77 KB
Description	Epitaxial Diode
Datasheet	DSEP9-06CR Datasheet
Additional preview pages of the DSEP9-06CR datasheet.

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Full PDF Text Transcription

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DSEP 9-06CR HiPerDynFREDTM Epitaxial Diode with soft recovery (Electrically Isolated Back Surface) IFAV = 9 A VRRM = 600 V trr = 15 ns VRSM V 600 VRRM V 600 Type A C ISOPLUS 247TM C A Isolated back surface * DSEP 9-06CR A = Anode, C = Cathode * Patent pending Symbol IFRMS IFAVM IFRM IFSM EAS IAR TVJ TVJM Tstg Ptot VISOL FC Weight Conditions TC = 140°C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by TVJM TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C; non-repetitive IAS = 2 A; L = 180 µH VA = 1.5·VR typ.; f = 10 kHz; repetitive Maximum Ratings 50 9 tbd 80 0.5 0.2 -55...+175 175 -55...

Published: Apr 3, 2005 |