DSEP9-06CR Description
rectangular, d = 0.5 tP < 10 µs; rating, pulse width limited by TVJM TVJ = 45°C; tp = 10 ms (50 Hz), sine TVJ = 25°C;.
DSEP9-06CR Key Features
- Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
- Low cathode to tab capacitance (< 25 pF)
- International standard package
- Planar passivated chips
- Very short recovery time
- Extremely low switching losses
- Low IRM-values
DSEP9-06CR Applications
- Antiparallel diode for high frequency switching devices