DWEPxx-xx Datasheet | IXYS

.. Contents Symbols and Definitions Nomenclature General Information Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design Page 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE(sat) B2 Types G-Series, Fast C2 Types S-Series, SCSOA Capability, Fast Types E-Series, Improved NPT³ technology 600 ...1200 V 600 V 600 V 1200 ... 1700 V IC 7 ... 20 A 7 ... 20 A 10 ... 20 A 20 ... 150 A 6 6 6 7 MOSFET Chips VDSS Hi Per FET Power MOSFET Polar HTTM MOSFET, very Low RDS(on) P-Channel Power MOSFET N-Channel Depletion Mode MOSFET Layouts RDS(on) 0 4.5 Ω 0 0.135 Ω 0 1.2 Ω 30 ... 110 Ω 8-10 11 12 12 13-17 70 ...1200 V 55 ... 300 V -100 ...-600 V 500 ...1000 V Bipolar Chips VRRM / VDRM Rectifier Diodes FREDs Low Leakage FREDs SONIC-FRDTM Diodes Ga As Schottky Diodes Schottky Diodes Phase Control Thyristors Fast Rectifier Diodes 1200 ... 1800 V 600 ... 1200 V 200 ... 1200 V 600 ... 1800 V 100 ... 600 V 8 ... 200 V 800 ... 2200 V 1600 ... 1800 V IF(AV)M / IT(AV)M 12 ... 416 A 8 ... 244 A 9 ... 148 A 12 ... 150 A 3 25 A 28 ... 145 A 15 ... 540 A 10 ... 26 A 18-19 20-21 22-23 24-25 26-27 28-31 32-33 34 Direct Copper Bonded (DCB), Direct Alu Bonded (DAB) Ceramic Substrates What is DCB/DAB? DCB Specification 35 36 IXYS reserves the right to change limits, test conditions and dimensions .. Symbols and Definitions Cies Ciss -di/dt IC ID IF IF(AV)M IFSM IGT IR IRM IT IT(AV)M ITSM RDS(on) Rthjc r T Tcase Th tfi Tj, T(vj) Tjm, T(vj)m trr VCE(sat) VCES VDRM VDSS VF VR VRRM VT VT0 Input capacitance of IGBT Input capacitance of MOSFET Rate of decrease of forward current DC collector current Drain current Forward current of diode Maximum average forward current at specified Th Peak one cycle surge forward current Gate trigger current Reverse current Maximum peak recovery current Forward current of thyristor Maximum average on-state current of a thyristor at specified Th Maximum surge current of a thyristor Static drain-source...