FDM21-05QC Description
TVJ = 25°C TVJ = 125°C VGS = ±20 V; VDS = 0.5 VDSS ID = 14 A; RG = 2 Ω 20 ns 20 ns 50 ns 15 ns with heat transfer paste 0.5 K/W 0.93 K/W.
FDM21-05QC Key Features
- Q-Class Power MOSFET technology
- low RDSon
- low gate charge for high frequency operation
- unclamped inductive switching (UIS) capability
- dv/dt ruggedness
- HiPerDynTM FRED
- consisting of series connected diodes
- enhanced dynamic behaviour for high frequency operation
- ISOPLUS i4-PACTM package
- isolated back surface
FDM21-05QC Applications
- chopper for power factor correction