IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits.
HiPerFREDTM diodes - fast reverse recovery - low operating forward voltage - low leakage current.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Advanced Technical Information
Bidirectional Switch with IGBT and fast Diode Bridge
in ISOPLUS i4-PACTM
FIO 50-12BD IC25
VCES VCE(sat) typ.
= 50 A = 1200 V = 2.