FID50-12BD Overview
Advanced Technical Information Bidirectional Switch with IGBT and fast Diode Bridge in ISOPLUS i4-PACTM FIO 50-12BD IC25 VCES VCE(sat) typ. = 50 A = 1200 V = 2.0 V 1 5 IGBT Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot TC = 25°C TC = 90°C VGE = ±15 V; TVJ = 125°C RBSOA, Clamped inductive load;.
FID50-12BD Key Features
- low saturation voltage
- positive temperature coefficient for easy paralleling
- fast switching
- short tail current for optimized performance in resonant circuits
- HiPerFREDTM diodes
- fast reverse recovery
- low operating forward voltage
- low leakage current
- ISOPLUS i4-PACTM package
- isolated back surface