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FMM75-01F - Power MOSFET

Key Features

  • HiPerFETTM technology - low RDSon - low gate charge for high frequency operation - unclamped inductive switching (UIS) capability - dv/dt ruggedness - fast intrinsic reverse diode.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FMM 75-01F HiPerFETTM Power MOSFET Phaseleg Topology in ISOPLUS i4-PACTM ID25 = 75 A VDSS = 100 V RDSontyp. = 18 mΩ Preliminary data 3 T1 5 4 T2 1 2 1 5 MOSFET T1/T2 Symbol VDSS VGS ID25 ID90 IF25 IF90 dv/dt EAR Conditions Maximum Ratings TVJ = 25°C to 150°C 100 V ±20 V TC = 25°C TC = 90°C 75 A 50 A (body diode) TC = 25°C (body diode) TC = 90°C 100 A 60 A VDS < VDSS; IF ≤ 300A;⎮diF/dt⎮≤ 100A/µs; RG = 2 Ω TVJ = 150°C 5 V/ns TC = 25°C 30 mJ Symbol R DSon VGSth IDSS I GSS Q g Qgs Q gd td(on) tr t d(off) tf VF trr R thJC RthJH Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max.