GWM220-004P3 - Three phase full bridge

Datasheet Summary

Features

MOSFETs in trench technology: - logic level gate control - low RDSon - optimized intrinsic reverse diode.
package: - high level of integration - high current capability - auxiliary terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. TVJ = 25°C TVJ = 125°C 2 0.1 0.2 94 18 29 40 85 140 90 1.0 70 1.1 1.6 2.0 3.2 2.

IXYS Corporation

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Datasheet Details

Part number	GWM220-004P3
Manufacturer	IXYS Corporation
File Size	80.02 KB
Description	Three phase full bridge
Datasheet	GWM220-004P3 Datasheet
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www.DataSheet4U.com GWM 220-004P3 Three phase full bridge with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G3 G1 S3 S1 L1 L2 L3 G4 G2 S4 S2 LG6 S6 S5 G5 VDSS = 40 V RDSon = 2.

Published: Jan 24, 2007 |