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ITXY1R6N50P - PolarHV Power MOSFET

Download the ITXY1R6N50P datasheet PDF. This datasheet also covers the ITXP1R6N50P variant, as both devices belong to the same polarhv power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z Md Weight 1.13/10 Nm/lb. in. 0.8 4 g g z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 500 3.0 5.5 ±100 5 50 6.5 V V nA µA µA Ω Advantages z z z Easy to mount Space savings H.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ITXP1R6N50P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
ITXP1R6N50P PolarHV Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Advance Technical Information PolarHVTM Power MOSFET N-Channel Enhancement Mode IXTP 1R6N50P IXTY 1R6N50P VDSS ID25 RDS(on) = 500 = 1.6 ≤ 6.5 V A Ω www.DataSheet4U.com Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 50 Ω TC = 25°C Maximum Ratings TO-252 (IXTY) 500 500 ± 30 ± 40 1.6 2.5 1.6 5 75 10 43 -55 ... +150 150 -55 ... +150 V V V V A A A mJ mJ V/ns G G S (TAB) TAB TO-220 (IXTP) W °C °C °C °C °C D S (TAB) D = Drain TAB = Drain G = Gate S = Source 1.6 mm (0.062 in.