IXBF9N160 Description
TVJ = 125°C RBSOA, Clamped inductive load;.
IXBF9N160 Key Features
- High Voltage BIMOSFETTM
- substitute for high voltage MOSFETs with significantly lower voltage drop
- fast switching for high frequency operation
- reverse conduction capability
- ISOPLUS i4-PACTM high voltage package
- isolated back surface
- enlarged creepage towards heatsink
- enlarged creepage between high voltage pins
- application friendly pinout
- high reliability