IXBT16N170A Datasheet Bipolar MOS Transistor

Manufacturer: IXYS (now Littelfuse)

IXBT16N170A bipolar mos transistor by IXYS (now Littelfuse) - Datasheet Preview

Datasheet Details

Part number	IXBT16N170A
Manufacturer	IXYS (now Littelfuse)
File Size	51.85 KB
Description	Bipolar MOS Transistor
Download	IXBT16N170A Download (PDF)

Overview

Advanced Technical Information High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 16N170A IXBT 16N170A VCES IC25 VCE(sat) tfi(typ) = 1700 V = 16 A = 6.0 V = 50 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 33 W Clamped inductive load VGE = 15 V, VCES = 1200V, TJ = 125°C RG = 33 W non repetitive TC = 25°C Maximum Ratings 1700 1700 ±20 ±30 16 10 40 ICM = VCES = 40 1350 10 150 -55 ...

+150 150 -55 ...

Key Features

Monolithic fast reverse diode.
High Blocking Voltage.
JEDEC TO-268 surface mount and JEDEC TO-247 AD packages.
Low switching losses.
High current handling capability.
MOS Gate turn-on - drive simplicity.
Molding epoxies meet UL 94 V-0 flammability classification Maximum Lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s Maximum tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) (TO-2.

📁 Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	IXBT16N170AHV	Bipolar MOS Transistor	IXYS
	IXBT16N170	BIMOSFET Monolithic Bipolar MOS Transistor	IXYS

More Datasheets from IXYS (now Littelfuse)

Part Number	Description
IXBT10N170	Bipolar MOS Transistor
IXBT42N170	Monolithic Bipolar MOS Transistor
IXBT42N170A	Monolithic Bipolar MOS Transistor
IXBD4410	Half Bridge Driver Chipset
IXBD4411	Half Bridge Driver Chipset
IXBF9N140	High Voltage BIMOSFET
IXBF9N140	Power MOSFET
IXBF9N160	High Voltage BIMOSFET
IXBF9N160	Power MOSFET
IXBH10N170	Bipolar MOS Transistor