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IXBT16N170A - Bipolar MOS Transistor

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IXYS Corporation

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IXBT16N170A Bipolar MOS Transistor by IXYS Corporation - Datasheet Preview — Datasheet preview – IXBT16N170A

Datasheet Details

Part number	IXBT16N170A
Manufacturer	IXYS Corporation
File Size	51.85 KB
Description	Bipolar MOS Transistor
Datasheet	IXBT16N170A Datasheet
Additional preview pages of the IXBT16N170A datasheet.

Product details

Features

Monolithic fast reverse diode.
High Blocking Voltage.
JEDEC TO-268 surface mount and JEDEC TO-247 AD packages.
Low switching losses.
High current handling capability.
MOS Gate turn-on - drive simplicity.
Molding epoxies meet UL 94 V-0 flammability classification Maximum Lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s Maximum tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) (TO-2.

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Published: Apr 5, 2005 |