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IXDA20N120AS - High Voltage IGBT

Key Features

  • NPT IGBT - low saturation voltage - positive temperature coefficient for easy paralleling.
  • TO-263 package - SMD assembly - industry standard outline.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IXDA 20N120AS High Voltage IGBT Short Circuit SOA Capability Square RBSOA IC25 = 38 A VCES = 1200 V V = CE(sat) typ 2.4 V TAB 1 3 h TAB IGBT Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot Conditions Maximum Ratings TVJ = 25°C to 150°C 1200 V ±20 V TC = 25°C TC = 90°C VGE = 15 V; RG = 82 W; TVJ = 125°C RBSOA, clamped inductive load; L = 100 µH VCE = VCES; VGE = ±15 V; RG = 82 W; TVJ = 125°C non-repetitive 38 A 25 A 35 A VCES 10 µs TC = 25°C 200 W Symbol VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. IC = 20 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 0.