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IXDN55N120 - High Voltage IGBT with optional Diode

Key Features

  • q q q q q q 50/60 Hz; IISOL £ 1 mA q q q NPT IGBT technology low saturation voltage low switching losses square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy paralleling MOS input, voltage controlled optional ultra fast diode International standard package miniBLOC Mounting torque Terminal connection torque (M4) 1.5/13 Nm/lb. in. 1.5/13 Nm/lb. in. 30 g Advantages q q q Space savings Easy to mount with 2 screws High power density Symbol Conditio.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA IXDN 55N120 VCES = 1200 V = 100 A IXDN 55N120 D1 IC25 VCE(sat) typ = 2.3 V C G G C miniBLOC, SOT-227 B E153432 G E E IXDN 55N120 E IXDN 55N120 D1 C E = Emitter x, G = Gate, C = Collector E = Emitter x E Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA tSC (SCSOA) PC VISOL TJ Tstg Md Weight Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW Continuous Transient TC = 25°C TC = 90°C TC = 90°C, tp = 1 ms VGE = ±15 V, TJ = 125°C, RG = 22 W Clamped inductive load, L = 30 µH VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 22 W, non repetitive TC = 25°C IGBT Diode Maximum Ratings 1200 1200 ±20 ±30 100 62 124 ICM = 100 VCEK < VCES 10 450 220 2500 -40 ... +150 -40 ...