IXDN55N120 Description
+150 V V V V A A A A µs W W V~ °C °C x Either Emitter terminal can be used as Main or Kelvin Emitter.
IXDN55N120 is High Voltage IGBT with optional Diode manufactured by IXYS.
| Manufacturer | Part Number | Description |
|---|---|---|
IXYS |
IXDN55N120D1 | High Voltage IGBT |
+150 V V V V A A A A µs W W V~ °C °C x Either Emitter terminal can be used as Main or Kelvin Emitter.