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IXFA10N60P - Polar MOSFET

Download the IXFA10N60P datasheet PDF. This datasheet also covers the IXFP10N60P variant, as both devices belong to the same polar mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z z z 1.6 mm (0.062 in. ) from case for 10 s Maximum tab temperature for soldering TO-263 package for 10s Mounting torque TO-220 TO-263 (TO-220) 300 260 Md Weight 1.13/10 Nm/lb. in. z 4 3 g g International standard packages Fast Intrinsic Diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 1 mA VGS = ± 30 VDC,.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFP10N60P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXFA102N15T N-Channel MOSFET INCHANGE
IXFA110N15T2 N-Channel MOSFET INCHANGE
IXFA12N65X2 Power MOSFET IXYS
IXFA12N65X2 N-Channel MOSFET INCHANGE
IXFA130N10T N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXFA10N80P Power MOSFET
IXFA102N15T Power MOSFET
IXFA110N15T2 Power MOSFET
IXFA12N50P Polar MOSFET
IXFA130N10T Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Advance Technical Information www.DataSheet4U.com PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA 10N60P IXFP 10N60P VDSS = 600 V ID25 = 10 A RDS(on) ≤ 740 mΩ ≤ 250 ns trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C Maximum Ratings 600 600 ± 30 ± 40 10 25 10 18 500 10 200 -55 ... +150 150 -55 ... +150 V V V V A A A mJ mJ V/ns W °C °C °C °C °C TO-220 (IXFP) G D S (TAB) TO-263 (IXFA) G S (TAB) G = Gate S = Source D = Drain TAB = Drain Features z z z 1.6 mm (0.