IXFB300N10P Description
+175 300 260 30..120/6.7..27 10 V V V V A A A A J V/ns W °C °C °C °C °C N/lb.
IXFB300N10P Key Features
- Fast intrinsic diode Avalanche Rated Low RDS(ON) and QG Low package inductance
- Part: IXFB300N10P
- Manufacturer: IXYS
- Size: 144.31 KB
Related IXYS Datasheets
| Part Number | Description |
|---|---|
| IXFB30N120P | Polar HiPerFET Power MOSFET |
| IXFB38N100Q2 | Power MOSFET |
| IXFB100N50P | Power MOSFET |
| IXFB100N50Q3 | HiperFET Power MOSFET Q3-Class |
| IXFB110N60P3 | Power MOSFET |