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Preliminary Technical Information
PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFB300N10P
VDSS ID25
RDS(on) trr
= = ≤ ≤
100V 300A 5.5mΩ 200ns
PLUS264TM (IXFB) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD FC Weight 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting force Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C Leads Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C Maximum Ratings 100 100 ±20 ±30 300 75 900 100 3 20 1500 -55 ... +175 175 -55 ... +175 300 260 30..120/6.7..27 10 V V V V A A A A J V/ns W °C °C °C °C °C N/lb.
IXFB300N10P Datasheet
