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IXFB300N10P Datasheet Polar Power MOSFET HiPerFET

Manufacturer: IXYS (now Littelfuse)

Overview

Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFB300N10P VDSS ID25 RDS(on) trr = = ≤ ≤ 100V 300A 5.5mΩ 200ns PLUS264TM (IXFB) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD FC Weight 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting force Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C Leads Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C Maximum Ratings 100 100 ±20 ±30 300 75 900 100 3 20 1500 -55 ...

+175 175 -55 ...

+175 300 260 30..120/6.7..27 10 V V V V A A A A J V/ns W °C °C °C °C °C N/lb.

Key Features

  • Fast intrinsic diode Avalanche Rated Low RDS(ON) and QG Low package inductance G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Advantages z z z z Easy to mount Space savings High power density Low gate drive requirement.