IXFC12N80P
Key Features
- S Isolated back surface G = Gate S = Source D = Drain Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 2.5 mA VGS = ±30 V, VDS = 0 V VDS = VDSS VGS = 0 V TJ = 125° C Characteristic Values Min. Typ. Max. 800 3.0 5.5 ±100 25 750 V V nA µA µA VGS = 10 V, ID = IT, (Note 1) Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
- 93 mΩ
