IXFC52N30P Description
.. Advance Technical Information PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFC52N30P VDSS ID25 RDS(on) = 300 V = 32 A = 75 mΩ Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR E AS dv/dt PD TJ TJM Tstg TL VISOL FC Test Conditions TJ = 25°C to.
IXFC52N30P Key Features
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation z Low drain to tab capacitance(<30pF)
- Amperes
- Amperes
- Volts Fig. 3. Output Characteristics @ 125 Deg. C