IXFC96N15P
Key Features
- z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
- Low drain to tab capacitance(<35pF)
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Fast intrinsic Rectifier Applications
- DC-DC converters
- Battery chargers
- Switched-mode and resonant-mode power supplies
- AC motor control Advantages
