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IXFC96N15P - PolarHT HiPerFET Power MOSFET ISOPLUS220

Key Features

  • z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(.

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Full PDF Text Transcription for IXFC96N15P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXFC96N15P. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com PolarHTTM HiPerFET Power MOSFET ISOPLUS220TM (Electrically Isolated Back Surface) IXFC 96N15P VDSS = 150 V ID25 = 42 A RDS(on) = 26 mΩ < 200 ns trr N-...

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) IXFC 96N15P VDSS = 150 V ID25 = 42 A RDS(on) = 26 mΩ < 200 ns trr N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated ISOPLUS 220TM E153432 Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC VISOL Weight 1.6 mm (0.062 in.) from case for 10 s Mounting force 50/60 Hz, 1 minute Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC TC TC TC TC = 25°C = 25°C, pulse width limited by TJM = 25°C = 25°C = 25°C Maximum Ratings 150 150 ±20 ±30 42 250 60 40 1.0 10 120 -55 ... +175 175 -55 ... +150 300 11...65/2.4...

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