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IXFH102N15T - Power MOSFET

Download the IXFH102N15T datasheet PDF. This datasheet also covers the IXFP102N15T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z z (TO-220 & TO-247) 1.13 / 10 (TO-263) 10..65 / 2.2..14.6 2.5 3.0 6.0 International Standard Packages Avalanche Rated Weight Advantages z z z Easy to Mount Space Savings High Power Density Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 1mA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 150°C Characteristic Values Min. Typ. Max. 150 2.5 5.0 V V.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFP102N15T_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Trench Gate Power MOSFET HiperFETTM N-Channel Enhancement Mode Avalanche Rated IXFA102N15T IXFH102N15T IXFP102N15T VDSS ID25 RDS(on) trr = 150V = 102A ≤ 18mΩ ≤ 120ns TO-263 (IXFA) G S (TAB) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC www.DataSheet4U.net Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C RGS = 1MΩ Continuous Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS , TJ ≤ 175°C TC = 25°C Maximum Ratings 150 150 ± 20 ± 30 102 75 300 51 750 20 455 -55 ... +175 175 -55 ... +175 V V V V A A A A mJ V/ns W °C °C °C °C °C Nmlb.in. N/lb. g g g TO-220 (IXFP) G D S (TAB) TO-247 (IXFH) G D (TAB) S D = Drain TAB = Drain G = Gate S = Source 1.6mm (0.062 in.