• Part: IXFH110N15T2
  • Description: TrenchT2 HiperFET Power MOSFET
  • Category: MOSFET
  • Manufacturer: IXYS
  • Size: 182.18 KB
Download IXFH110N15T2 Datasheet PDF
IXYS
IXFH110N15T2
Features z z z z z z (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds 300 260 6 International standard package 175°C Operating Temperature High current handling capability Fast intrinsic Rectifier Dynamic d V/dt rated Low RDS(on) Advantages z z z Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 250μA VGS = ± 20V, VDS = 0V VDS = VDSS VGS = 0V TJ = 150°C VGS = 10V, ID = 0.5 - ID25, Notes 1, 2 Characteristic Values Min. Typ. Max. 150 2.5 4.5 V V Applications z z z ±200 n A 25 μA 500 μA 13 mΩ z z z z DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor drives Uninterruptible power supplies High speed power switching applications ..net © 2008 IXYS CORPORATION, All rights reserved DS100094(12/08) Symbol Test...