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IXFH110N15T2 - TrenchT2 HiperFET Power MOSFET

Key Features

  • z z z z z z G D S (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6mm (0.062in. ) from case for 10s Plastic body for 10 seconds 300 260 6 International standard package 175°C Operating Temperature High current handling capability Fast intrinsic Rectifier Dynamic dV/dt rated Low RDS(on) Advantages z z z Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 250μA.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Technical Information TrenchT2TM HiperFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFH110N15T2 VDSS ID25 RDS(on) = 150V = 110A ≤ 13mΩ TO-247 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL Tsold Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM,, VDD ≤ VDSS,TJ ≤ 175°C TC = 25°C Maximum Ratings 150 150 ± 20 ± 30 110 300 55 800 15 480 -55 ... +175 175 -55 ... +175 V V V V A A A mJ V/ns W °C °C °C °C °C g Features z z z z z z G D S (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6mm (0.062in.