IXFH11N80
Features
- International standard packages
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Low package inductance
- easy to drive and to protect
- Fast intrinsic Rectifier
Symbol
VDSS VGS(th) IGSS IDSS
RDS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
VGS = 0 V, ID = 3 m A
VDS = VGS, ID = 4 m A
VGS = ±20 VDC, VDS = 0
VDS = 0.8
- VDSS VGS = 0 V
TJ = 25°C TJ = 125°C
VGS = 10 V, ID = 0.5
- ID25
11N80 13N80
Pulse test, t £ 300 ms, duty cycle d £ 2 %
V 4.5 V
±100 n A
250 m A 1 m A
0.95 W 0.80 W
Applications
- DC-DC converters
- Synchronous rectification
- Battery chargers
- Switched-mode and resonant-mode power supplies
- DC choppers
- AC motor control
- Temperature and lighting controls
- Low voltage relays
Advantages...
