Datasheet4U Logo Datasheet4U.com

IXFH12N100F - Power MOSFET

Key Features

  • l RF capable MOSFETs l Double metal process for low gate resistance l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXFH12N65X2 Power MOSFET IXYS
IXFH12N65X2 N-Channel MOSFET INCHANGE
IXFH12N80P Power MOSFET IXYS
IXFH12N90 Power MOSFET ETC
IXFH100N25P PolarHT HiPerFET Power MOSFET IXYS

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXFH12N100 Power MOSFET
IXFH12N100P Polar HiPerFET Power MOSFETs
IXFH12N50 (IXFHxxxx) HiPerRF Power MOSFETs F-Class: MegaHertz Switching
IXFH12N50 (IXFHxxxx) HiPerRF Power MOSFETs F-Class: MegaHertz Switching
IXFH12N50F HiPerRF Power MOSFETs F-Class: MegaHertz Switching

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Advance Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFH 12N100F VDSS IXFT 12N100F ID25 RDS(on) = 1000 V = 12 A = 1.05 Ω trr ≤ 250 ns TO-247 AD (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-247 TO-247 TO-268 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings (TAB) 1000 1000 ± 20 ± 30 12 48 12 30 1.0 5 300 -55 ... +150 150 -55 ...