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HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family Obsolete:
IXFM10N100
IXFM12N100
Symbol
Test Conditions
IXFH/IXFM 10 N100 IXFH/IXFM 12 N100 IXFH 13 N100
V DSS
IR
D25
DS(on)
1000 V 10 A 1.20 W
1000 V 12 A 1.05 W
1000 V 12.5 A 0.90 W
trr £ 250 ns
Maximum Ratings TO-247 AD (IXFH)
V DSS
VDGR VGS VGSM ID25
I
DM
IAR
EAR dv/dt
PD TJ TJM T
stg
TL Md Weight
T J
= 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous Transient
TC = 25°C
T C
=
25°C,
pulse
width
limited
by
T JM
TC = 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
T J
£
150°C,
R G
=
2
W
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Mounting torque
1000
V
1000
V
±20
V
±30
V
10N100
10
12N100
12
13N100 12.
IXFH13N100 Datasheet
