Datasheet4U Logo Datasheet4U.com

IXFH150N17T2 - Power MOSFET

Key Features

  • z z Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque (TO-247) TO-247 TO-268 300 260 1.13/10 6 4 z z z High Current Handling Capability Fast Intrinsic Diode Dynamaic dv/dt Rated Avalanche Rated Low RDS(on) Advantages z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 1mA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 150°C Characteristic Values Min. Typ. Max. 175 2.5 4.5 ± 200 V.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXFH150N20T N-Channel MOSFET INCHANGE
IXFH150N20T Power MOSFET IXYS
IXFH15N100 HiPerFET Power MOSFETs IXYS
IXFH15N80Q N-Channel 800V Power MOSFET VBsemi
IXFH100N25P PolarHT HiPerFET Power MOSFET IXYS

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXFH150N17T Power MOSFET
IXFH150N15P Power MOSFET
IXFH15N100P Power MOSFET
IXFH15N100Q HiPerFET Power MOSFETs
IXFH15N100Q3 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Advance Technical Information TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH150N17T2 IXFT150N17T2 VDSS ID25 RDS(on) trr = = ≤ ≤ 175V 150A 12.0mΩ 160ns TO-247 (IXFH) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C Maximum Ratings 175 175 ± 20 ± 30 150 400 75 1.0 15 880 -55 ... +175 175 -55 ... +175 V V V V A A A J V/ns W °C °C °C °C °C Nm/lb.in.