Overview: HiPerFETTM Power MOSFETs Q-Class
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q VDSS = 1000 V ID25 = 15 A RDS(on) = 0.7 Ω trr ≤ 250 ns Preliminary data sheet TO-247 AD (IXFH) Symbol VDSS V
DGR
VGS VGSM ID25 IDM I
AR
EAR E
AS
dv/dt
PD TJ TJM Tstg TL M
d
Weight
Symbol
VDSS VGS(th) I
GSS
IDSS
RDS(on) Test Conditions TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM T C = 25°C TC = 25°C T C = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, T J ≤ 150°C, R G = 2 Ω TC = 25°C 1.6 mm (0.063 in) from case for 10 s Maximum Ratings 1000 V 1000 V ±20 V ±30 V 15 A 60 A 15 A 45 mJ 1.5 J 5 V/ns 360 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C Mounting torque TO-247 TO-264
TO-247 TO-268 TO-264 1.13/10 Nm/lb.in. 0.9/6 Nm/lb.in. 6 g 4 g 10 g Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA V GS = ±20 V, DC V DS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C VGS = 10 V, ID = 0.5 • ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1000 3.0 V 5.0 V
±200 nA 50 µA 2 mA
0.
