IXFH15N80
Features
300 -55 ... +150 150 -55 ... +150 W °C °C °C °C International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated
- Low package inductance
- easy to drive and to protect
- Fast intrinsic Rectifier
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PD TJ TJM Tstg TL Md Weight
1.6 mm (0.062 in.) from case for 10 s Mounting torque
1.13/10 Nm/lb.in. 6 g
Applications Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 m A VDSS temperature coefficient VDS = VGS, ID = 4 m A VGS(th) temperature coefficient VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 TJ = 25°C TJ = 125°C Characteristic Values Min. Typ. Max. 800 0.096 2.0 -0.214 ±100 250 1 0.70 0.60 4.5 V %/K V %/K n A m A m A W W Advantages
- Easy to mount with 1 screw
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