• Part: IXFH15N80Q
  • Description: HiPerFET Power MOSFETs
  • Category: MOSFET
  • Manufacturer: IXYS
  • Size: 111.91 KB
Download IXFH15N80Q Datasheet PDF
IXYS
IXFH15N80Q
Features - - - - G = Gate S = Source S D = Drain TAB = Drain (TAB) 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 TO-268 1.13/10 Nm/lb.in. 6 4 g g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 m A VDS = VGS, ID = 4 m A VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C Characteristic Values Min. Typ. Max. 800 2.0 4.5 ±100 25 1 0.60 V V n A m A m A W IXYS advanced low Qg process International standard packages Low RDS (on) Unclamped Inductive Switching (UIS) rated - Fast switching - Molding epoxies meet UL 94 V-0 flammability classification Advantages - Easy to mount - Space savings - High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. 98514B (7/00) © 2000 IXYS All rights reserved 1-4 IXFH 15N80Q IXFT 15N80Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless...